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APT50M80B2VFR APT50M80LVFR
POWER MOS V (R)
FREDFET
T-MaxTM
500V 58A 0.080
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
TO-264
* Identical Specifications: T-MAXTM or TO-264 Package * Lower Leakage * Fast Recovery Body Diode * Faster Switching * Avalanche Energy Rated
G S D
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT50M80B2VFR _ LVFR UNIT Volts Amps
500 58 232 30 40 625 5.0 -55 to 150 300 58 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.080 250 1000 100 2 4
(VGS = 10V, 29A)
Ohms A nA Volts
12-2003 050-5912 Rev B
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M80B2VFR_LVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 58A @ 25C VGS = 15V VDD = 250V ID = 58A @ 25C RG = 0.6 MIN TYP MAX UNIT pF
8797 1286 562 423 41 214 14 25 64 23
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
58 232 1.3 5
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -58A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -58A, di/dt = 100A/s) Reverse Recovery Charge (IS = -58A, di/dt = 100A/s) Peak Recovery Current (IS = -58A, di/dt = 100A/s)
270 540 2.7 5.9 16 22.5
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.20 40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.78mH, R = 25, Peak I = 58A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -58A di/dt 700A/s VR 500V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.20 0.9 0.15
0.7 0.5
12-2003
0.10
Note:
PDM t1 t2
0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2
050-5912 Rev B
Z
JC
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
160
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
APT50M80B2VFR_LVFR
15 &10V 7V 140 120 100 80 60 5V 40 4.5V 20 4V 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0.0302
0.00809F
6V
Power (watts)
5.5V
0.0729
0.0182F
0.0955 Case temperature. (C)
0.264F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 90
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.4
NORMALIZED TO V = 10V @ 29A
GS
80 70 60 50 40 30 20 10 0 TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
1.3 1.2 1.1 VGS=10V 1.00 0.90 0.80 VGS=20V
0
20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
60
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES)
1.15 1.10
50 40 30 20 10 0
1.05
1.00
0.95
0.90 0.85 -50
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
I V
D
= 29A = 10V
GS
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
1.1 1.0 0.9 0.8 0.7
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6 -50
050-5912 Rev B
12-2003
APT50M80B2VFR_LVFR
232
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000
100
C, CAPACITANCE (pF)
10,000
Ciss
100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1,000
Coss Crss
10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 58A
200 100
12 VDS=100V
TJ =+150C TJ =+25C 10
8 VDS=250V VDS=400V
4
100 200 300 400 500 600 700 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAXTM(B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
12-2003
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
2.21 (.087) 2.59 (.102)
050-5912 Rev B
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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